Modeling the I-V Characteristics of the Thin Film Pt/BaxSr1-xTiO3/Pt Structure under the Electron Beam Irradiation

Electronics

  • V. V. Buniatyan National Polytechnic University of Armenia
  • G. Sh. Melikyan National Polytechnic University of Armenia
  • V. M. Tsakanov “Candle” Synchrotron Research RA
  • H. R. Dashtoyan National Polytechnic University of Armenia
Keywords: leakage current, ferroelectric, trapping center, Schottky barrier, Pool-Frenkel emission, oxygen vacancy.

Abstract

A new model of the I-V characteristics based on the Schottky field-assisted and the PoolFrenkel emission effects under the simultaneous influence of electron beam radiation on ferroelectric films is proposed. Numerical calculations and the results of mathematical modeling of the I-V characteristics carried out for different values of Pt/BaxSt1-xTiO3/Pt (Pt/BST/Pt) thin film structure parameters are presented when the film is irradiated by an electron beam of different flux. The theoretical estimations of the emission process indicate that the Pool-Frenkel emission is compatible with the Schottky field emission mechanism. Due to the presence of electron irradiation, the Pool-Frenkel emission takes place in the range of lower voltages. The analysis of the I-V characteristics indicates that the trapping centers can beactivated at very low (in spite of classical theory, exceeding 106 V/cm) electric fields (103…104 V/cm) due to the existence of the electron beam irradiation. From the practical point of view, the further understanding of the mechanism of the trapping/detrapping process can allow to characterize the I-V behavior, hysteresis effects, the noise, capacitance and other effects in the Pt/BSTO/Pt structures. The proposed theory may be useful for the analysis and modeling of the parameters and physical processes taking place in other similar provskite oxide - based structures.

Author Biographies

V. V. Buniatyan, National Polytechnic University of Armenia

Buniatyan Vahe Vazgen
Dr. of tech.sci., Prof. of the Chair “Microelectronics and Biomedical Devices”, NPUA

G. Sh. Melikyan, National Polytechnic University of Armenia

Melikyan Gohar Shavarsh
Cand. of tech. sci., Assoc. Prof. of the Chair “Microelectronics and Bio-medical Devices”

V. M. Tsakanov, “Candle” Synchrotron Research RA

Tsakanov Vasiliy Mkrtich
Dr. of Phys.-math. sci., Head of the Fund of Organization “Candle” Synchrotron Research RA

H. R. Dashtoyan, National Polytechnic University of Armenia

Dashtoyan Hovhannes Robert
Post-graduate student of the Chair “Microelectronics and Biomedical Devices”

Published
2016-06-02
Issue
Vol 19 No 1 (2016): Vol 19 No 1 (2016)
Section
Articles