A Strong Electromagnetic Radiation Interaction with Bilayer Graphene

Electronics

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We develop a microscopic theory of a strong electromagnetic radiation interaction with bilayer graphene where an energy gap can be opened by using external gates that create a static electric field perpendicular to graphene planes. We show that an adiabatic change on time of the gate potentials (that leads to the resonance of the energy gap with an electromagnetic field) may produce full inversion of the electron population between valence and conduction bands. Quantum kinetic equations for density matrix are obtained by the use of a tight-binding approach within the second quantized Hamiltonian in an intense laser field.